cystech electronics corp. spec. no. : c990fp issued date : 2015.04.07 revised date : page no. : 1/ 9 MTN4N65BFP cystek product specification n-channel enhancement mode power mosfet MTN4N65BFP bv dss 650v i d @v gs =10v, t c =25 c 4a i d @v gs =10v, t c =100 c 2.4a r ds(on) @v gs =10v, i d =2a 2 (typ) description the MTN4N65BFP is a n-channel enhancement-mode mosfet, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. the to-220fp package is universally preferred for all commercial-industrial applications features ? low on resistance ? simple drive requirement ? fast switching characteristic ? insulating package, front/back side insulating voltage=2500v(ac) ? rohs compliant package applications ? adapter ? switching mode power supply ordering information device package shipping MTN4N65BFP-0-ub-s to-220fp (rohs compliant package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, ub : 50 pcs / tube, 20 tubes/box product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c990fp issued date : 2015.04.07 revised date : page no. : 2/ 9 MTN4N65BFP cystek product specification symbol outline absolute maximum ratings (t c =25c) parameter symbol limits unit drain-source voltage v ds 650 v gate-source voltage v gs 30 v continuous drain current i d 4* a continuous drain current @t c =100 c i d 2.4* a pulsed drain current @ v gs =10v (note 1) i dm 16* a single pulse avalanche energy (note 2) e as 36 mj avalanche current (note 1) i as 3 a repetitive avalanche energy (note 1) e ar 3.4 mj maximum temperature for soldering @ lead at 0.125 in(0.318mm) from case for 10 seconds t l 300 c w total power dissipation (t c =25 ) linear derating factor p d 34 0.27 w/ c operating junction and storage temperature tj, tstg -55~+150 c *drain current limited by maximum junction temperature note : 1 . repetitive rating; pulse width limited by maximum junction temperature. 2 . i as =3a, v dd =50v, l=8mh, r g =25 , starting t j =+25 . MTN4N65BFP to-220fp g gate d drain s source g d s
cystech electronics corp. spec. no. : c990fp issued date : 2015.04.07 revised date : page no. : 3/ 9 MTN4N65BFP cystek product specification thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 3.68 c/w thermal resistance, junction-to-ambient, max r th,j-a 62.5 c/w characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 650 - - v v gs =0v, i d =250 a, tj=25 ? bv dss / ? tj - 0.6 - v/ c reference to 25 c, i d =250 a v gs(th) 2.0 - 4.0 v v ds = v gs , i d =250 a *g fs - 5.3 - s v ds =15v, i d =2a i gss - - 100 na v gs = 30v - - 1 v ds =650v, v gs =0v i dss - - 10 a v ds =520v, v gs =0v, t c =125 c *r ds(on) - 2.0 2.6 v gs =10v, i d =2a dynamic *qg - 18.8 - *qgs - 3.3 - *qgd - 8.7 - nc i d =4a, v dd =520v, v gs =10v *t d(on) - 10.6 - *tr - 10.2 - *t d(off) - 40 - *t f - 32.8 - ns v dd =325v, i d =4a, v gs =10v, r g =25 ciss - 575 - coss - 56 - crss - 32 - pf v gs =0v, v ds =25v, f=1mhz source-drain diode *i s - - 4 *i sm - - 16 a *v sd - - 1.5 v i s =2a, v gs =0v *trr - 330 - ns *qrr - 1.27 - c v gs =0v, i f =4a, di/dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c990fp issued date : 2015.04.07 revised date : page no. : 4/ 9 MTN4N65BFP cystek product specification typical characteristics typical output characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 50 v ds , drain-source voltage(v) i d , drain current(a) v gs =4.5v 10v,9v,8v,7v,6v v gs =5v brekdown voltage vs ambient temperature 0.6 0.7 0.8 0.9 1 1.1 1.2 -75 -50 -25 0 25 50 75 100 125 150 175 t a , ambient temperature(c) bv dss , normalized drain-source breakdown voltage i d =250a, v gs =0v static drain-source on-state resistance vs drain current 0 1 2 3 4 5 0.001 0.01 0.1 1 10 i d , drain current(a) rds(on) , static drain-source on-state resistance() v gs =10v drain current vs gate-source voltage 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0246810 v gs , gate-source voltage(v) id , drain current(a) t a =25c v ds =10v static drain-source on-state resistance vs gate-source voltage 0 2 4 6 8 10 12 14 024681 0 ta=25c v gs , gate-source voltage(v) r ds(on) , static drain-source on-state resistance() i d =2a forward drain current vs source-drain voltage 0.001 0.01 0.1 1 10 00.20.40.60.811.2 v sd , source drain voltage(v) i f , forward current(a) vgs=0v tj=25c tj=150c
cystech electronics corp. spec. no. : c990fp issued date : 2015.04.07 revised date : page no. : 5/ 9 MTN4N65BFP cystek product specification typical characteristics(cont.) capacitance vs reverse voltage 1 10 100 1000 0 5 10 15 20 25 30 v ds , drain-to-source voltage(v) capacitance-(pf) ciss coss crss f=1mhz static drain-source on-resistance vs ambient temperature 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -75 -50 -25 0 25 50 75 100 125 150 175 t a , ambient temperature(c) r ds(on) , normalized static drain-source on-state resistance i d =2a, v gs =10v r dson @tj=25c : 2 typ. maximum safe operating area 0.01 0.1 1 10 100 1 10 100 1000 v ds , drain-source voltage(v) i d , drain current(a) operation in this area is limited by r ds( on) dc 10ms 100ms 1s 1ms 100 s 10s t c =25c, tj=150c, v gs =10v, r jc =3.68c/w, single pulse gate charge characteristics 0 2 4 6 8 10 0 4 8 121620 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =4a v ds =130v v ds =325v v ds =520v maximum drain current vs case temperature 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 25 50 75 100 125 150 175 t c , case temperature(c) i d , maximum drain current(a) v gs =10v, r jc =3.68c/w threshold voltage vs junction tempearture 0.2 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma
cystech electronics corp. spec. no. : c990fp issued date : 2015.04.07 revised date : page no. : 6/ 9 MTN4N65BFP cystek product specification typical characteristics(cont.) forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) ta=25c pulsed v ds =15v single pulse power rating, junction to case 0 500 1000 1500 2000 2500 3000 3500 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width(s) power (w) t j(max) =150c t c =25c jc =3.68c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r jc (t)=r(t)*r jc 2.duty factor, d=t 1 /t 2 3.t jm -t c =p dm *r jc (t) 4.r jc =3.68c/w
cystech electronics corp. spec. no. : c990fp issued date : 2015.04.07 revised date : page no. : 7/ 9 MTN4N65BFP cystek product specification test circuit and waveforms
cystech electronics corp. spec. no. : c990fp issued date : 2015.04.07 revised date : page no. : 8/ 9 MTN4N65BFP cystek product specification test circuit and waveforms(cont.)
cystech electronics corp. spec. no. : c990fp issued date : 2015.04.07 revised date : page no. : 9/ 9 MTN4N65BFP cystek product specification to-220fp dimension marking: date code device name style: pin 1.gate 2.drain 3.source 3-lead to-220fp plastic package cystek package code: fp *typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.171 0.183 4.35 4.65 g 0.246 0.258 6.25 6.55 a1 0.051 ref 1.300 ref h 0.138 ref 3.50 ref a2 0.112 0.124 2.85 3.15 h1 0.055 ref 1.40 ref a3 0.102 0.110 2.60 2.80 h2 0.256 0.272 6.50 6.90 b 0.020 0.030 0.50 0.75 j 0.031 ref 0.80 ref b1 0.031 0.041 0.80 1.05 k 0.020 0.50 ref b2 0.047 ref 1.20 ref l 1.102 1.118 28.00 28.40 c 0.020 0.030 0.500 0.750 l1 0.043 0.051 1.10 1.30 d 0.396 0.404 10.06 10.26 l2 0.036 0.043 0.92 1.08 e 0.583 0.598 14.80 15.20 m 0.067 ref 1.70 ref e 0.100 * 2.54* n 0.012 ref 0.30 ref f 0.106 ref 2.70 ref notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
|
